Central Semiconductor MPS751 TRA TIN/LEAD BJTs - ບາຍໂປລາ ທຣານຊິສຕໍເຕີ PNP 80Vcbo 60Vceo 5.0Vebo 2.0A 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 75 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 2 V, 2 A

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV