Central Semiconductor CMUDM8004 TR PBFREE MOSFETs SMD-ສັນຍານນ້ອຍ P-Channel Mosfet

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 880 pC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 250 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 450 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 200 mS

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V