Central Semiconductor BC212B TIN/LEAD BJTs - ບາຍໂປລາ ທຣານຊິສຕໍ PNP Trans 50Vcbo 200 mA Ic 350 mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 400 at 2 mA, 5 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 250 mV