Bourns BIDW50N65T IGBT Transistors IGBT Discrete 650V, 50A ໃນ TO-247

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 416 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 100 A

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 100 A