Bourns BIDW40N65ES5 IGBT Transistors IGBT Discrete 650V, 40A, ການສະຫຼຸບຄວາມໄວລະດັບກາງໃນ TO-247-3L

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 230 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 80 A