Bourns BIDW30N60T IGBT Transistors IGBT Discrete 600V, 30A ໃນ TO-247

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 230 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 60 A

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 60 A