Advanced Semiconductor, Inc. MRF141 ທຣານຊິດເອັບພີເອັສຟີອີທີ RF Transistor

Gain: 20 dB

Technology: Si

Output Power: 150 W

Configuration: Single

Mounting Style: SMD/SMT

Operating Frequency: 175 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: + 40 V

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 5 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 5 V